Technical Details

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 40.3A (Tc)
• Rds On (Max) @ Id, Vgs 85mOhm @ 20A, 15V
• Power Dissipation (Max) 187.5W (Tj)
• Vgs(th) (Max) @ Id 3.5V @ 250µA
• Supplier Device Package TO-247
• Drive Voltage (Max Rds On, Min Rds On) 15V
• Vgs (Max) +18V, -8V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 62.3 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds 1716 pF @ 800 V