Technical Details

• Package / Case 10-SIP
• Mounting Type Through Hole
• Configuration 4 N-Channel
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 4W (Ta), 20W (Tc)
• Drain to Source Voltage (Vdss) 57V
• Current - Continuous Drain (Id) @ 25°C 3A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 200pF @ 10V
• Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package 10-SIP