Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 4 N-Channel (Full Bridge)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 1.277kW (Tc)
• Drain to Source Voltage (Vdss) 700V
• Current - Continuous Drain (Id) @ 25°C 464A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 18000pF @ 700V
• Rds On (Max) @ Id, Vgs 4.8mOhm @ 160A, 20V
• Gate Charge (Qg) (Max) @ Vgs 860nC @ 20V
• Vgs(th) (Max) @ Id 2.4V @ 16mA