- Product Model TPH2R903PL,L1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS No
- Description PB-FPOWERMOSFETTRANSISTORSOP8-AD
- Classification Single FETs, MOSFETs
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Inventory:1500
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 70A (Tc)
- Rds On (Max) @ Id, Vgs 2.9mOhm @ 35A, 10V
- Power Dissipation (Max) 960mW (Ta), 81W (Tc)
- Vgs(th) (Max) @ Id 2.1V @ 200µA
- Supplier Device Package 8-SOP Advance (5x5)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 15 V