- Product Model TK8P65W,RQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description PB-F POWER MOSFET TRANSISTOR DPA
- Classification Single FETs, MOSFETs
Inventory:3484
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 7.8A (Ta)
- Rds On (Max) @ Id, Vgs 670mOhm @ 3.9A, 10V
- Power Dissipation (Max) 80W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 300µA
- Supplier Device Package DPAK
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 300 V