- Product Model TK110N65Z,S1F
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description POWER MOSFET TRANSISTOR TO-247(O
- Classification Single FETs, MOSFETs
Inventory:1525
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 24A (Ta)
- Rds On (Max) @ Id, Vgs 110mOhm @ 12A, 10V
- Power Dissipation (Max) 190W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1.02mA
- Supplier Device Package TO-247
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 300 V