- Product Model TK4A80E,S4X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description PB-FPOWERMOSFETTRANSISTORTO-220S
- Classification Single FETs, MOSFETs
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Inventory:1540
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Ta)
- Rds On (Max) @ Id, Vgs 3.5Ohm @ 2A, 10V
- Power Dissipation (Max) 35W (Tc)
- Vgs(th) (Max) @ Id 4V @ 400µA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V