- Product Model TK62N60W5,S1VF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description PB-F POWER MOSFET TRANSISTOR TO-
- Classification Single FETs, MOSFETs
Inventory:1537
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 61.8A (Ta)
- Rds On (Max) @ Id, Vgs 45mOhm @ 30.9A, 10V
- Power Dissipation (Max) 400W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 3.1mA
- Supplier Device Package TO-247
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 205 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 300 V