- Product Model TPH5R60APL,L1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS No
- Description PB-F POWER MOSFET TRANSISTOR N-C
- Classification Single FETs, MOSFETs
Inventory:4694
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Rds On (Max) @ Id, Vgs 5.6mOhm @ 30A, 10V
- Power Dissipation (Max) 960mW (Ta), 132W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 500µA
- Supplier Device Package 8-SOP Advance (5x5)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 50 V