- Product Model TK8R2E06PL,S1X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description PB-F POWER MOSFET TRANSISTOR TO-
- Classification Single FETs, MOSFETs
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Inventory:1559
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 10V
- Power Dissipation (Max) 81W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 300µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 30 V