Technical Details

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount, Wettable Flank
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.2W (Ta)
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 8A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 384pF @ 25V
• Rds On (Max) @ Id, Vgs 222mOhm @ 2A, 10V
• Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package PowerDI5060-8 (Type R)