Technical Details

• Package / Case 8-WDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 485pF @ 15V, 807pF @ 15V
• Rds On (Max) @ Id, Vgs 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
• Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V, 17.5nC @ 10V
• Vgs(th) (Max) @ Id 2.2V @ 250µA
• Supplier Device Package 8-DFN-EP (3x3)