Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Dual) Common Source
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 328W (Tj)
• Drain to Source Voltage (Vdss) 900V
• Current - Continuous Drain (Id) @ 25°C 154A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 7007pF @ 450V
• Rds On (Max) @ Id, Vgs 14mOhm @ 100A, 15V
• Gate Charge (Qg) (Max) @ Vgs 546.4nC @ 15V
• Vgs(th) (Max) @ Id 4.3V @ 40mA