Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 4 N-Channel (Full Bridge)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 119W (Tj)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 51A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 2420pF @ 800V
• Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 20V
• Gate Charge (Qg) (Max) @ Vgs 213.5nC @ 20V
• Vgs(th) (Max) @ Id 4.3V @ 20mA
• Supplier Device Package 22-PIM (33.8x42.5)