Technical Details

• Package / Case i4-Pac™-5
• Mounting Type Through Hole
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 75A
• Rds On (Max) @ Id, Vgs 25mOhm @ 50A, 10V
• Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
• Vgs(th) (Max) @ Id 4V @ 4mA
• Supplier Device Package ISOPLUS i4-PAC™