Technical Details

• Package / Case Die
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual), P-Channel
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 50W (Tc), 48W (Tc)
• Drain to Source Voltage (Vdss) 200V, 40V
• Current - Continuous Drain (Id) @ 25°C 16A (Tc), 30A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
• Rds On (Max) @ Id, Vgs 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
• Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
• Vgs(th) (Max) @ Id 3.5V @ 250µA, 2.5V @ 250µA
• Supplier Device Package Die
• Grade Automotive
• Qualification AEC-Q101