Technical Details

• Package / Case 3-XDFN Exposed Pad
• Mounting Type Surface Mount, Wettable Flank
• Transistor Type NPN - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 100mV @ 500µA, 10mA
• Current - Collector Cutoff (Max) 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
• Supplier Device Package DFN1110D-3
• Grade Automotive
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 340 mW
• Frequency - Transition 230 MHz
• Resistor - Base (R1) 10 kOhms
• Resistor - Emitter Base (R2) 10 kOhms
• Qualification AEC-Q101