Technical Details

• Package / Case TO-226-3, TO-92-3 Long Body
• Mounting Type Through Hole
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 1A (Ta)
• Rds On (Max) @ Id, Vgs 1.95Ohm @ 500mA, 10V
• Power Dissipation (Max) 900mW (Ta)
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package TO-92MOD
• Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 150 V
• Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 85 pF @ 10 V