- Product Model BFU768F,115
- Brand NXP Semiconductors
- RoHS No
- Description BFU768F - NPN WIDEBAND SILICON G
- Classification Bipolar RF Transistors
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Inventory:2495650
Technical Details
- Package / Case SOT-343F
- Mounting Type Surface Mount
- Transistor Type NPN
- Operating Temperature 150°C (TJ)
- Gain 13.1dB
- Power - Max 220mW
- Current - Collector (Ic) (Max) 70mA
- Voltage - Collector Emitter Breakdown (Max) 2.8V
- DC Current Gain (hFE) (Min) @ Ic, Vce 155 @ 10mA, 2V
- Frequency - Transition 110GHz
- Noise Figure (dB Typ @ f) 1.1dB ~ 1.2dB @ 5GHz ~ 5.9GHz
- Supplier Device Package 4-DFP