- Product Model 2SJ635-TL-E
- Brand Sanyo Semiconductor/onsemi
- RoHS No
- Description 2SJ635 - P-CHANNEL SILICON MOSFE
- Classification Single FETs, MOSFETs
Inventory:4280
Technical Details
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Mounting Type Through Hole
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 12A (Ta)
- Rds On (Max) @ Id, Vgs 60mOhm @ 6A, 10V
- Power Dissipation (Max) 1W (Ta), 30W (Tc)
- Vgs(th) (Max) @ Id 2.6V @ 1mA
- Supplier Device Package TP
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 20 V