Technical Details

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 960mW (Ta), 1.04W (Ta)
• Drain to Source Voltage (Vdss) 30V, 25V
• Current - Continuous Drain (Id) @ 25°C 14A (Ta), 30A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 15V, 5050pF @ 13V
• Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
• Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V, 30nC @ 4.5V
• Vgs(th) (Max) @ Id 2V @ 340µA, 2V @ 1mA
• Supplier Device Package 8-PQFN (5x6)