Technical Details

• Package / Case Die
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature -65°C ~ 200°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max) 10nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V
• Frequency - Transition 250MHz
• Supplier Device Package Die
• Current - Collector (Ic) (Max) 800 mA
• Voltage - Collector Emitter Breakdown (Max) 40 V
• Power - Max 800 mW