- Product Model SSM6N62TU,LXHF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS No
- Description MOSFET 2N-CH 20V 0.8A UF6
- Classification FET, MOSFET Arrays
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Inventory:2668
Technical Details
- Package / Case 6-SMD, Flat Leads
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- Power - Max 500mW (Ta)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 800mA (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 177pF @ 10V
- Rds On (Max) @ Id, Vgs 85mOhm @ 800mA, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V
- FET Feature Logic Level Gate, 1.2V Drive
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package UF6
- Grade Automotive
- Qualification AEC-Q101