- Product Model EPC2219
- Brand EPC
- RoHS Yes
- Description TRANS GAN 65V AECQ101 3.3OHM DIE
- Classification Single FETs, MOSFETs
-
PDF
Inventory:9429
Technical Details
- Package / Case Die
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
- Rds On (Max) @ Id, Vgs 3.3Ohm @ 59mA, 5V
- Vgs(th) (Max) @ Id 2.5V @ 100µA
- Supplier Device Package Die
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Drain to Source Voltage (Vdss) 65 V
- Gate Charge (Qg) (Max) @ Vgs 0.064 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 32.5 V
Related Products
GANFET N-CH 40V 10A DIE OUTLINE
Inventory: 52011
GANFET N-CH 60V 1.7A DIE
Inventory: 40896
GANFET N-CH 100V 500MA DIE
Inventory: 82458
TRANS GAN BUMPED DIE
Inventory: 12647
DIODE ZENER 5.1V 250MW 2DFN
Inventory: 359428
MOSFET N-CH 20V 4WLCSP
Inventory: 47170
