Technical Details

• Package / Case 6-VDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 P-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 700mW
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 3.1A
• Input Capacitance (Ciss) (Max) @ Vds 450pF @ 10V
• Rds On (Max) @ Id, Vgs 155mOhm @ 3.1A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1.5V @ 250µA
• Supplier Device Package 6-MicroFET (2x2)