Technical Details
-
Package / Case
TO-204AA, TO-3
-
Mounting Type
Through Hole
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Technology
MOSFET (Metal Oxide)
-
FET Type
P-Channel
-
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
-
Rds On (Max) @ Id, Vgs
940mOhm @ 6.5A, 10V
-
Power Dissipation (Max)
75W (Tc)
-
Vgs(th) (Max) @ Id
4V @ 250µA
-
Supplier Device Package
TO-204AA (TO-3)
-
Drive Voltage (Max Rds On, Min Rds On)
10V
-
Vgs (Max)
±20V
-
Drain to Source Voltage (Vdss)
200 V
-
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
-
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
-
ECCN
EAR99
-
HTSUS
8542.39.0001
Related Products
HEXFET POWER MOSFET
In Stock:
10984
Top