Technical Details

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 36A (Tc)
• Rds On (Max) @ Id, Vgs 90mOhm @ 18A, 20V
• Power Dissipation (Max) 272W (Tc)
• Vgs(th) (Max) @ Id 5.8V @ 20mA
• Supplier Device Package TO-3P(N)
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Vgs (Max) ±25V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 67 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 800 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)