Technical Details

• Package / Case 3-SSIP
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
• Frequency - Transition 200MHz
• Supplier Device Package 3-SPA
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 300 mW