Technical Details

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature -55°C ~ 150°C (TJ)
• Gain 24dB
• Power - Max 350mW
• Voltage - Collector Emitter Breakdown (Max) 15V
• DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 5mA, 10V
• Frequency - Transition 800MHz
• Noise Figure (dB Typ @ f) 6dB @ 200MHz
• Supplier Device Package TO-92-3