Technical Details

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 960mW (Ta), 1W (Ta)
• Drain to Source Voltage (Vdss) 25V
• Current - Continuous Drain (Id) @ 25°C 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 13V, 3603pF @ 13V
• Rds On (Max) @ Id, Vgs 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
• Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 4.5V, 21.5nC @ 4.5V
• Vgs(th) (Max) @ Id 2V @ 250µA, 2V @ 800µA
• Supplier Device Package 8-PQFN (5x6)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant