- Product Model XPW6R30ANB,L1XHQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS No
- Description MOSFET N-CH 100V 45A 8DSOP
- Categories Single FETs, MOSFETs
- In Stock 374
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 45A (Ta)
- Rds On (Max) @ Id, Vgs 6.3mOhm @ 22.5A, 10V
- Power Dissipation (Max) 960mW (Ta), 132W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 500µA
- Supplier Device Package 8-DSOP Advance
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)


