Technical Details

• Package / Case 4-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 2A (Tc)
• Rds On (Max) @ Id, Vgs 200mOhm @ 2A, 5V
• Power Dissipation (Max) 1.09W (Tc)
• Vgs(th) (Max) @ Id 2V @ 250µA
• Supplier Device Package 4-DIP, Hexdip
• Drive Voltage (Max Rds On, Min Rds On) 5V
• Vgs (Max) +10V, -5V
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 25 V