- Product Model RFD4N06L
- Brand Harris Corporation
- RoHS No
- Description N-CHANNEL POWER MOSFET
- Classification Single FETs, MOSFETs
Inventory:2924
Technical Details
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Rds On (Max) @ Id, Vgs 600mOhm @ 1A, 5V
- Power Dissipation (Max) 30W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package IPAK
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Vgs (Max) ±10V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V