Technical Details

• Package / Case DirectFET™ Isometric ST
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 47A (Tc)
• Rds On (Max) @ Id, Vgs 11mOhm @ 30A, 10V
• Power Dissipation (Max) 38W (Tc)
• Vgs(th) (Max) @ Id 4V @ 33µA
• Supplier Device Package MG-WDSON-2
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 30 V