Technical Details

• Package / Case 3-SSIP
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1.5V @ 5mA, 50mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 10V
• Frequency - Transition 50MHz
• Current - Collector (Ic) (Max) 200 mA
• Voltage - Collector Emitter Breakdown (Max) 300 V
• Power - Max 1 W