Technical Details

• Package / Case TO-218-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 58A (Tc)
• Rds On (Max) @ Id, Vgs 18mOhm @ 47A, 10V
• Power Dissipation (Max) 170W
• Vgs(th) (Max) @ Id 3.5V @ 1mA
• Supplier Device Package PG-TO218-3-1
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 50 V
• Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 25 V
• Qualification AEC-Q101