Technical Details

• Package / Case 6-VFDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Technology MOSFET (Metal Oxide)
• Power - Max 700mW
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 8.2A
• Input Capacitance (Ciss) (Max) @ Vds 605pF @ 10V
• Rds On (Max) @ Id, Vgs 20mOhm @ 4A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 4V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1.5V @ 1mA
• Supplier Device Package 6-HWSON