Technical Details

• Package / Case 6-VDFN Exposed Pad
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 3A (Ta)
• Rds On (Max) @ Id, Vgs 50mOhm @ 3A, 10V
• FET Feature Schottky Diode (Isolated)
• Vgs(th) (Max) @ Id 2V @ 250µA
• Supplier Device Package 6-MLP (3x3)
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 3.1 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 10 V