- Product Model RN2102MFV,L3F(CT
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS No
- Description TRANS PREBIAS PNP 50V 0.1A VESM
- Categories Single, Pre-Biased Bipolar Transistors
- In Stock 30880
Technical Details
- Package / Case SOT-723
- Mounting Type Surface Mount
- Transistor Type PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max) 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
- Supplier Device Package VESM
- Current - Collector (Ic) (Max) 100 mA
- Voltage - Collector Emitter Breakdown (Max) 50 V
- Power - Max 150 mW
- Frequency - Transition 250 MHz
- Resistor - Base (R1) 10 kOhms
- Resistor - Emitter Base (R2) 10 kOhms
- ECCN EAR99
- HTSUS 8541.21.0075
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
Related Products
MOSFET N-CH 20V 9.5A 6MICROFET
In Stock: 22708
DIODE ZENER 10V 200MW UMD2
In Stock: 52208
DIODE ZENER 16V 200MW UMD2
In Stock: 10993
