- Product Model TK099V65Z,LQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 650V 30A 5DFN
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 14748
Technical Details
- Package / Case 4-VSFN Exposed Pad
- Mounting Type Surface Mount
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 30A (Ta)
- Rds On (Max) @ Id, Vgs 99mOhm @ 15A, 10V
- Power Dissipation (Max) 230W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1.27mA
- Supplier Device Package 5-DFN (8x8)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 300 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


