- Product Model TK040Z65Z,S1F
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 650V 57A TO247-4L
- Categories Single FETs, MOSFETs
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PDF
- In Stock 22
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 57A (Ta)
- Rds On (Max) @ Id, Vgs 40mOhm @ 28.5A, 10V
- Power Dissipation (Max) 360W (Tc)
- Vgs(th) (Max) @ Id 4V @ 2.85mA
- Supplier Device Package TO-247-4L(T)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6250 pF @ 300 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


