- Product Model HGT1S10N120BNST
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description IGBT NPT 1200V 35A TO263
- Classification Single IGBTs
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Inventory:1500
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Input Type Standard
- Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
- Supplier Device Package TO-263 (D2PAK)
- IGBT Type NPT
- Td (on/off) @ 25°C 23ns/165ns
- Switching Energy 320µJ (on), 800µJ (off)
- Test Condition 960V, 10A, 10Ohm, 15V
- Gate Charge 100 nC
- Current - Collector (Ic) (Max) 35 A
- Voltage - Collector Emitter Breakdown (Max) 1200 V
- Current - Collector Pulsed (Icm) 80 A
- Power - Max 298 W