Technical Details

• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 90A (Tc)
• Rds On (Max) @ Id, Vgs 7mOhm @ 15A, 10V
• Power Dissipation (Max) 1.4W (Ta)
• Vgs(th) (Max) @ Id 3V @ 250µA
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±25V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 64.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2826 pF @ 15 V
• Qualification AEC-Q101