- Product Model TK3R9E10PL,S1X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description X35 PB-F POWER MOSFET TRANSISTOR
- Categories Single FETs, MOSFETs
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PDF
- In Stock 9
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Rds On (Max) @ Id, Vgs 3.9mOhm @ 50A, 10V
- Power Dissipation (Max) 230W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6320 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


