Technical Details

• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 13A (Ta), 32A (Tc)
• Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V
• Power Dissipation (Max) 1.3W (Ta)
• Vgs(th) (Max) @ Id 2.8V @ 250µA
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 80 V
• Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 40 V