技术参数

• Package / Case 8-VDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
• Drain to Source Voltage (Vdss) 25V
• Current - Continuous Drain (Id) @ 25°C 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 12.5V, 4520pF @ 12.5V
• Rds On (Max) @ Id, Vgs 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
• Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V, 85nC @ 10V
• Vgs(th) (Max) @ Id 1.9V @ 250µA, 1.8V @ 250µA
• Supplier Device Package 8-DFN (5x6)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant