技术参数

• Transistor Type NPN - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 200mV @ 250µ, 5mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 5mA, 5V
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 200 mW
• Resistor - Base (R1) 22 kOhms
• Resistor - Emitter Base (R2) 22 kOhms
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)