技术参数

• Package / Case 4-XFBGA
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Common Drain
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 1.3W (Ta)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 6A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 542pF @ 10V
• Rds On (Max) @ Id, Vgs 35mOhm @ 3A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4V
• FET Feature Logic Level Gate, 2.5V Drive
• Vgs(th) (Max) @ Id 1.5V @ 1mA
• Supplier Device Package 4-EFLIP-LGA (1.62x1.62)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)