技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.9W (Ta), 22W (Tc), 2.1W (Ta), 30W (Tc)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 10A (Ta), 34A (Tc), 13.8A (Ta), 52A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 910pF @ 15V, 1300pF @ 15V
• Rds On (Max) @ Id, Vgs 13.7mOhm @ 10A, 10V, 7.3mOhm @ 20A, 10V
• Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V, 20nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package 8-DFN (5x6)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant