技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• FET Type N-Channel
• Input Capacitance (Ciss) (Max) @ Vds 10pF @ 12V (VGS)
• Voltage - Breakdown (V(BR)GSS) 30 V
• Supplier Device Package TO-92-3
• Drain to Source Voltage (Vdss) 30 V
• Power - Max 350 mW
• Resistance - RDS(On) 30 Ohms
• Current - Drain (Idss) @ Vds (Vgs=0) 50 mA @ 20 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected